E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer
نویسندگان
چکیده
منابع مشابه
Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser
Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers @quantum wells ~QWs!# within tunneling distance of a single-quantum-dot ~QD! layer of an AlGaAs–GaAs–InGaAs–InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2310/cm for...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 2021
ISSN: 0013-5194,1350-911X
DOI: 10.1049/ell2.12189